Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of "TB9103FTG," a gate driver IC [1] for automotive brushed DC motors, ...

An effective power circuit consists of more than just stationary components like SiC and GaN MOSFETs. The gate driver, an autonomous component, precedes the electronic switches and guarantees optimal ...

CHANDLER, Ariz., Jan. 21, 2026 (GLOBE NEWSWIRE) -- To meet the demanding needs of high-voltage power management applications, Microchip Technology (Nasdaq: MCHP) today announces the introduction of ...

NXP Semiconductors is supplying a family of isolated gate-driver ICs to control the silicon-carbide (SiC) power switches at the heart of ZF Friedrichshafen’s next-gen electric-vehicle (EV) traction ...

All power circuits primarily use switching devices made of silicon carbide and gallium nitride. Although such devices produce superior working speeds, high voltages, processed currents, and low power ...

Change never comes easy in the world of power electronics. To achieve higher power densities, the latest 3.3 kW switched-mode power supplies (SMPS) are adopting silicon-carbide (SiC) power MOSFETs in ...

ST has announced two new high-speed half-bridge gate drivers that bring GaN efficiency, thermal performance, and miniaturisation to a broad range of power and motion-control applications. The ...

Toshiba’s new IC comes in a compact 6mm×6mm P-VQFN36-0606-0.50 package. Credit: Alexander Tolstykh/Shutterstock. Toshiba Electronics Europe has started offering engineering samples of its TB9084FTG, a ...